On The Effect of Electron-Hole Recombination in Disordered GaAs-Aa1-xALAs Multi-quantum Well Structure

Uno E. Uno; Isah K.U and Umaru Ahmadu

doi:10.14331/ijfps.2012.330037

Authors

Uno E. Uno Federal University of Technology, Minna, NigeriaP.M.B 65, Minna, Nigeria Author
Isah K.U and Umaru Ahmadu Federal University of Technology, Minna, NigeriaP.M.B 65, Minna, Nigeria Author

DOI:

https://doi.org/10.14331/ijfps.2012.330037

Keywords:

Disordered structure, semiconductor, energy transition and hopping length

Abstract

The disordered electron-hole recombination in multi-quantum well was investigated using analytical method based on the rate equations. The results show extreme broad distribution of the recombination time which depends exponentially on the distances between the recombining excitons. The energies at each localised state shows an energy splitting between the electronic ground state and the first excited state of 0.0038eV.

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