The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

Suwan Mendis; Chin-Che Tin; Ilkham G. Atabaev; Bakhtiyar G. Atabaev

doi:10.14331/ijfps.2013.330059

Authors

Suwan Mendis Department of Physics, 206 Allison Laboratory, Auburn University, AL 36849, U.S.A Author
Chin-Che Tin Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia Author
Ilkham G. Atabaev Physical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan Author
Bakhtiyar G. Atabaev Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan Author

DOI:

https://doi.org/10.14331/ijfps.2013.330059

Keywords:

silicon carbide, impurity, doping, diffusion

Abstract

Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity doping by thermal diffusion in SiC is possible if there is a parallel mechanism, such as oxidation or silicidation that creates silicon or carbon vacancies, which then allows dopant impurities to diffuse into these vacancies. This paper describes the experimental procedures by which oxidation and silicidation can be used to generate vacancies and enhance impurity doping at temperatures below 1400 ºC‎.

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