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  <timestamp>20250604001504435</timestamp>
  <depositor>
    <depositor_name>funda:funda</depositor_name>
    <email_address>fundamentalJournals@gmail.com</email_address>
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  <registrant>WEB-FORM</registrant>
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<body>
  <journal>
    <journal_metadata>
  <full_title>International Journal of Fundamental Physical Sciences</full_title>
  <abbrev_title>IJFPS</abbrev_title>
  <issn media_type='electronic'>22318186</issn>
</journal_metadata>
<journal_issue>
  <publication_date media_type='online'>
    <month>09</month>
    <year>2011</year>
  </publication_date>
  <journal_volume>
    <volume>1</volume>
  </journal_volume>
  <issue>3</issue>
</journal_issue><!-- ============== -->
<journal_article publication_type='full_text'>
  <titles>
  <title>Zn2SiO4 and SnO2 nanowires synthesized by thermal ramping technique</title>
  </titles>
  <contributors>
    <organization sequence='first' contributor_role='author'>Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia</organization>
    <person_name sequence='first' contributor_role='author'>
     <given_name>Zainal</given_name>
      <surname>Abidin Ali</surname>
    </person_name>
    <person_name sequence='additional' contributor_role='author'>
      <given_name>R.</given_name>
      <surname>Puteh</surname>
    </person_name>
   <organization sequence='additional' contributor_role='author'>Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia</organization>
  </contributors>
  <jats:abstract xml:lang='en'>
    <jats:p>In this report, nanowires of Zn2SiO4 and SnO2 have been successfully synthesized using a simple novel method namely thermal ramping technique. The technique applies thermal ramping of the sample to a temperature of 900 oC using carbothermal reduction method. This technique requires no carrier gas. Elemental analysis and crystal structure were evaluated using Field Emission Scanning Electron Microscopy (FESEM) , Energy Dispersive X-ray (EDX) and X-ray Diffraction(XRD) analysis. Nanowires of SnO2 and Zn2SiO4 with diameter ranging from 15-25 nm were observed. The effect of Au thickness in synthesizing Zn2SiO4 is also discussed.</jats:p>
  </jats:abstract>
<publication_date media_type='online'>
    <month>09</month>
    <year>2011</year>
  </publication_date>  <pages>
  <first_page>64</first_page>
  <last_page>67</last_page>
  </pages>
  <doi_data>
  <doi>10.14331/ijfps.2011.330016</doi>
  <resource>https://www.fundamentaljournals.com/index.php/ijfps/article/view/17</resource>
  </doi_data>
</journal_article>
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