Authors: Uno E. Uno, Moses E. Emetere, Isah K.U, Umaru Ahmadu
Affiliations: Federal University of Technology, Minna, Nigeria P.M.B 65, Minna, Nigeria
Emails: emetere@yahoo.com
Journal: International Journal of Fundamental Physical Sciences (IJFPS)
Volume: 2, Issue: 4, Pages: 52-57, Date: December, 2012
ISSN: 2231-8186
DOI: https://doi.org/10.14331/ijfps.2012.330037
The disordered electron-hole recombination in multi-quantum well was investigated using analytical method based on the rate equations. The results show extreme broad distribution of the recombination time which depends exponentially on the distances between the recombining excitons. The energies at each localised state shows an energy splitting between the electronic ground state and the first excited state of 0.0038eV.
Disordered structure, semiconductor, energy transition, hopping length