Authors: Zainal Abidin Ali, R. Puteh
Affiliations: Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia
Emails: zaba_87@yahoo.com; rustam@um.edu.my
Journal: International Journal of Fundamental Physical Sciences (IJFPS)
Volume: 1, Issue: 3, Pages: 64-67, Date: September, 2011
ISSN: 2231-8186
DOI: https://doi.org/10.14331/ijfps.2011.330016
In this report, nanowires of Zn2SiO4 and SnO2 have been successfully synthesized using a simple novel method namely thermal ramping technique. The technique applies thermal ramping of the sample to a temperature of 900 °C using carbothermal reduction method. This technique requires no carrier gas. Elemental analysis and crystal structure were evaluated using Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray (EDX) and X-ray Diffraction (XRD) analysis. Nanowires of SnO2 and Zn2SiO4 with diameter ranging from 15–25 nm were observed. The effect of Au thickness in synthesizing Zn2SiO4 is also discussed.
Thermal Ramping, Carbothermal Technique, SnO2 Nanowires